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| SK 8 GD 126 Absolute Maximum Ratings Symbol Conditions IGBT Values Units Inverse/Freewheeling CAL diode SEMITOP(R) 2 IGBT Module SK 8 GD 126 Target Data Characteristics Symbol Conditions IGBT min. typ. max. Units Features Typical Applications Inverse/Freewheeling CAL diode Mechanical data GD 1 19-10-2005 RAM (c) by SEMIKRON SK 8 GD 126 Fig.5 Typ. output characteristic, tp = 80 s, 25C, 125 C Fig.7 Turn-on / -off energy = f (IC) Fig.8 Turn-on / -off energy = f (RG) Fig.9 Typ. gate charge characteristic 2 19-10-2005 RAM (c) by SEMIKRON SK 8 GD 126 Fig.11 Typ. switching times vs. IC Fig.12 Typ. switching times vs. gate resistor RG Fig.13a Diode turn-off energy dissipation per pulse Fig.13b Diode turn-off energy dissipation per pulse 3 19-10-2005 RAM (c) by SEMIKRON SK 8 GD 126 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 19-10-2005 RAM (c) by SEMIKRON |
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